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VI20120S-E3 Hoja de datos - Vishay Semiconductors

V20120S-E3 image

Número de pieza
VI20120S-E3

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page
5 Pages

File Size
144 kB

Fabricante
Vishay
Vishay Semiconductors 

Ultra Low VF = 0.50 V at IF = 5 A


FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
  For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.

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