General Description
   planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. This Power MOSFET is produced using ThinkiSemis advanced

FEATUREs
■ Low RDS(on) (0.014Ω )@VGS=10V
■ Low Gate Charge (Typical 70nC)
■ Low Crss (Typical 160pF)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (175°C)