Número de pieza
UPA800T
componentes Descripción
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8 Pages
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Fabricante
Renesas Electronics
UPA800T Hoja de datos - Renesas Electronics
Renesas Electronics
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.
FEATURES
• Low Noise
NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
• High Gain
|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC4228)
Número de pieza
componentes Descripción
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Fabricante
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
Renesas Electronics
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
NEC => Renesas Technology
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
TY Semiconductor
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
Renesas Electronics
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
NEC => Renesas Technology
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD
Renesas Electronics
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