datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Renesas Electronics  >>> UPA1912TE PDF

UPA1912TE Hoja de datos - Renesas Electronics

UPA1912 image

Número de pieza
UPA1912TE

Other PDF
  no available.

PDF
DOWNLOAD     

page
10 Pages

File Size
167.6 kB

Fabricante
Renesas
Renesas Electronics 

DESCRIPTION
The µPA1912 is a switching device which can be driven directly by a 2.5-V power source.
The µPA1912 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
   RDS(on)1 = 50 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
   RDS(on)2 = 52 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
   RDS(on)3 = 70 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A)


Número de pieza
componentes Descripción
Ver
Fabricante
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]