Número de pieza
UF830L-TM3-R
componentes Descripción
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8 Pages
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285.2 kB
Fabricante
Unisonic Technologies
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UF830L-TM3-R Hoja de datos - Unisonic Technologies
Unisonic Technologies
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
FEATURES
* RDS(ON)=1.5Ω
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
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