TSTS7102 Hoja de datos - Vishay Semiconductors
Fabricante

Vishay Semiconductors
Description
TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.
Features
• Very high radiant intensity
• Suitable for pulse operation
• Narrow angle of half intensity ϕ = ± 5°C
• Peak wavelength λp = 950 nm
• High reliability
• Good spectral matching to Si photodetectors
Applications
Radiation source in near infrared range
Número de pieza
componentes Descripción
Ver
Fabricante
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
Vishay Semiconductors
GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case ( Rev : 1999 )
Vishay Semiconductors
GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case ( Rev : 1999 )
Vishay Semiconductors
GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case ( Rev : 1999 )
Vishay Semiconductors
GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case
Vishay Semiconductors
Bipolar PNP Device in a Hermetically sealed TO18
Semelab - > TT Electronics plc
Bipolar NPN Device in a Hermetically sealed TO18
Semelab - > TT Electronics plc
HERMETICALLY SEALED TO-5 CASE
Unspecified
HERMETICALLY SEALED TO-5 CASE
Clairex Technologies, Inc
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package.
Semelab - > TT Electronics plc