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TSSS2600(2008) Hoja de datos - Vishay Semiconductors

TSSS2600 image

Número de pieza
TSSS2600

Other PDF
  1999   lastest PDF  

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page
5 Pages

File Size
96.1 kB

Fabricante
Vishay
Vishay Semiconductors 

DESCRIPTION
TSSS2600 is an infrared, 950 nm emitting diode in GaAs technology, molded in a miniature, clear plastic package with side view lens.


FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 3.6 x 2.2 x 5
• Peak wavelength: λp = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°, horizontal
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with detector TEST2600
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC


APPLICATIONS
• Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600)

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Fabricante
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Siliconix

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