General Description
The TSM8N80 N-Channel enhancement mode Power MOSFETis produced by planar stripe DMOS technology. This  advanced  technology  has  been  especially  tailored  to  minimize  on-state  resistance,  provide  superior switching  performance,  and  withstand  high  energy  pulse  in  the  avalanche  and  commutation  mode.  These devices  are  well  suited  for  high  efficiency  switch  mode  power  supply,  electronic  lamp  ballast  based  on half bridge.

FEATUREs
● Low RDS(ON) 1.4Ω(Max.)
● Low gate charge typical @ 41nC (Typ.)
● Improve dv/dt capability