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TSHA5203(2011) Hoja de datos - Vishay Semiconductors

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Número de pieza
TSHA5203

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  2008   2009   lastest PDF  

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page
5 Pages

File Size
101 kB

Fabricante
Vishay
Vishay Semiconductors 

DESCRIPTION
The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.


FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Compliant to RoHS Directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC


APPLICATIONS
• Infrared remote control and free air data transmission
   systems
• This emitter series is dedicated to systems with panes in
   transmission space between emitter and detector,
   because of the low absorbtion of 875 nm radiation in glass


Número de pieza
componentes Descripción
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Fabricante
Infrared Emitting Diode, 875 nm, GaAlAs ( Rev : 2011 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs ( Rev : 2014 )
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Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs ( Rev : 2009 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs ( Rev : 2011 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs ( Rev : 2009 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs ( Rev : 2008 )
PDF
Vishay Semiconductors

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