TK50P03M1 Hoja de datos - Toshiba
Fabricante

Toshiba
Features
(1) High-speed switching
(2) Low gate charge: QSW = 8.2 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
APPLICATIONs
• Switching Voltage Regulators
• Motor Drivers
• Power Management Switches
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Fabricante
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Unspecified
MOSFETs Silicon N-Channel MOS (U-MOSVI-H) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Unspecified
MOSFETs Silicon N-Channel MOS (U-MOSVI-H) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVI-H) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Toshiba
MOSFETs Silicon N-Channel MOS (U-MOSVI-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Toshiba