TK50F15J1 - Toshiba Hoja de datos

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TK50F15J1

componentes Descripción

MOSFETs Silicon N-Channel MOS (U-MOSIII-H)

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10 Pages

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322.4 kB

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Features
(1) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

APPLICATIONs
• Switching Voltage Regulators
• DC-DC Converters

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