TK16A55D Hoja de datos - Toshiba
Fabricante

Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.28 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 9.0 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 550 V)
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
APPLICATIONs
• Switching Voltage Regulators
Número de pieza
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Fabricante
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MOSFETs Silicon N-Channel MOS
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Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba