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TK10J80E

componentes Descripción

MOSFETs Silicon N-Channel MOS (π-MOSVIII)

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9 Pages

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226.5 kB

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Features
(1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.)
(2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V)
(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)

APPLICATIONs
• Switching Voltage Regulators

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