TJ90S04M3L Hoja de datos - Toshiba
Número de pieza
TJ90S04M3L
Fabricante

Toshiba
Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(4) Enhancement mode: Vth = -1.0 to -2.0 V (VDS = -10 V, ID = -1 mA)
APPLICATIONs
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Número de pieza
componentes Descripción
Ver
Fabricante
MOSFETs Silicon P-Channel MOS (U-MOSVI)
Toshiba
MOSFETs Silicon P-Channel MOS (U-MOSVI) ( Rev : 2020 )
Toshiba
MOSFETs Silicon P-Channel MOS (U-MOSVI)
Toshiba
MOSFETs Silicon P-Channel MOS (U-MOSVI)
Toshiba
MOSFETs Silicon P-Channel MOS (U-MOSVI)
Toshiba
MOSFETs Silicon P-Channel MOS (U-MOSVI) ( Rev : 2012 )
Toshiba
MOSFETs Silicon P-Channel MOS (U-MOSVI)
Toshiba
MOSFETs Silicon P-Channel MOS (U-MOSVI)
Toshiba
MOSFETs Silicon P-Channel MOS (U-MOSVI)
Toshiba
MOSFETs Silicon P-Channel MOS (U-MOSVI)
Toshiba