Número de pieza
TIP150
componentes Descripción
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Fabricante
New Jersey Semiconductor
TIP150 Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min.)
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ |c=5A
APPLICATIONS
• Designed for use in automotive ignition,switching and motor
control applications.
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