TIP112F(2002) Hoja de datos - KEC
Fabricante
KEC
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
• High DC Current Gain.
: hFE=1000(Min.), VCE=4V, IC=1A.
• Low Collector-Emitter Saturation Voltage.
• Complementary to TIP117F.
Número de pieza
componentes Descripción
Ver
Fabricante
NPN Epitaxial Planar Transistor
First Components International
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
