FEATURES
• BROAD BAND INTERNALLY MATCHED FET
• HIGH POWER
    P1dB= 42.0dBm at 10.7GHz to 11.7GHz
• HIGH GAIN
    G1dB= 7.0dB at 10.7GHz to 11.7GHz
• ･LOW INTERMODULATION DISTORTION
    IM3= -45dBc at Pout= 30.0dBm
    Single Carrier Level
• HERMETICALLY SEALED PACKAGE