Número de pieza
SWP50N06
componentes Descripción
Other PDF
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PDF
page
6 Pages
File Size
720 kB
Fabricante
Xian Semipower Electronic Technology Co., Ltd.
SWP50N06 Hoja de datos - Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
FEATUREs
■ High ruggedness
■ RDS(ON) (Max 16.8mΩ)@VGS=10V
■ Gate Charge (Typ 41nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
Número de pieza
componentes Descripción
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