Número de pieza
SWD10N80K2
componentes Descripción
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7 Pages
File Size
664.4 kB
Fabricante
Xian Semipower Electronic Technology Co., Ltd.
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SWD10N80K2 Hoja de datos - Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
FEATUREs
● High ruggedness
● Low RDS(ON) (Typ 0.58Ω)@VGS=10V
● Low Gate Charge (Typ 27nC)
● Improved dv/dt Capability
● 100% Avalanche Tested
● Application:LED,Charge,PC Power
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