Número de pieza
SW100N10A
componentes Descripción
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PDF
page
5 Pages
File Size
507.8 kB
Fabricante
Xian Semipower Electronic Technology Co., Ltd.
SW100N10A Hoja de datos - Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
FEATUREs
◾ High ruggedness
◾ RDS(ON) (Max 7.4m Ω)@VGS=10V
◾ Gate Charge (Typ 127nC)
◾ Improved dv/dt Capability
◾ 100% Avalanche Tested
Número de pieza
componentes Descripción
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