GENERAL DESCRIPTION
   SVD5N60AT/F  is  an  N-channel  enhancement  mode  power MOS field  effect  transistor  which  is  produced  using  Silan  proprietary S-RinTM  structure  DMOS  technology.  The  improved  planar  stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance,  and  withstand  high  energy  pulse  in  the  avalanche and commutation mode.
   These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

FEATURES
*  5A,600V,RDS(on)˄typ˅=2.0W@VGS=10V
*  Low gate charge
*  Low Crss
*  Fast switching
*  Improved dv/dt capability