DESCRIPTION
   SVD3205T/F/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It can be widely used in electronic ballast, low-power SWPS.

FEATURES
• 110A, 55V, RDS(on)(typ.)=7.5mΩ@VGS=10V
• Low gate charge
• Low Crss
• Fast switching
• Improved dv/dt capability