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SUD19N20-90-E3 Hoja de datos - Vishay Semiconductors

SUD19N20-90 image

Número de pieza
SUD19N20-90-E3

componentes Descripción

Other PDF
  2006  

PDF
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page
8 Pages

File Size
150.1 kB

Fabricante
Vishay
Vishay Semiconductors 

FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC


APPLICATIONS
• Primary Side Switch

Page Link's: 1  2  3  4  5  6  7  8 

Número de pieza
componentes Descripción
Ver
Fabricante
N-Channel 200-V (D-S), 175°C MOSFET ( Rev : 2006 )
PDF
Vishay Semiconductors
N-Channel 200 V (D-S) 175 °C MOSFET
PDF
Vishay Semiconductors
N-Channel 200 V (D-S) 175 °C MOSFET
PDF
Vishay Semiconductors
N-Channel 200-V (D-S) 175C MOSFET
PDF
Vishay Semiconductors
N-Channel 200-V (D-S) 175 °C MOSFET
PDF
Vishay Semiconductors
N-Channel 200-V (D-S) 175C MOSFET ( Rev : 2003 )
PDF
Vishay Semiconductors
N-Channel 200 V (D-S) 175 °C MOSFET
PDF
Vishay Semiconductors
N-Channel 200 V (D-S) 175 °C MOSFET
PDF
Vishay Semiconductors
N-Channel 200-V (D-S) 175°C MOSFET
PDF
Vishay Semiconductors
N-Channel 200-V (D-S) 175°C MOSFET ( Rev : 2003 )
PDF
Vishay Semiconductors

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