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STW55NM60ND(2007) Hoja de datos - STMicroelectronics

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STW55NM60ND

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9 Pages

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140.8 kB

Fabricante
ST-Microelectronics
STMicroelectronics 

Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.


FEATUREs
■ The worldwide best RDS(on) amongst the fast
   recovery diode devices in TO-247
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities


APPLICATION
■ Switching applications


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Fabricante
N-channel 600 V, 0.135 Ω, 20 A TO-247 MDmesh™ II Power MOSFET
PDF
STMicroelectronics
N-channel 600 V, 0.075 Ω, 35 A MDmesh™ II Power MOSFET TO-247 ( Rev : 2009 )
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STMicroelectronics
N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
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N-channel 600 V, 0.09 Ω, 45 A TO-247 FDmesh™ Power MOSFET (with fast diode)
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STMicroelectronics
N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh™ Power MOSFET (with fast diode) ( Rev : 2010 )
PDF
STMicroelectronics
N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh™ Power MOSFET (with fast diode)
PDF
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N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2011 )
PDF
STMicroelectronics
N-channel 600 V, 0.11 Ω, 25 A FDmesh™ II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
PDF
STMicroelectronics
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh™ II Power MOSFET (with fast diode) ( Rev : 2008 )
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N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
PDF
STMicroelectronics

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