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Número de pieza
STW48NM60N

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page
13 Pages

File Size
709.9 kB

Fabricante
ST-Microelectronics
STMicroelectronics 

Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.


FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance


APPLICATIONs
■ Switching applications


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componentes Descripción
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Fabricante
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
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N-channel 650 V, 0.055 Ω typ., 49 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
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N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
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