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STTH1210G Hoja de datos - STMicroelectronics

STTH1210 image

Número de pieza
STTH1210G

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11 Pages

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168.8 kB

Fabricante
ST-Microelectronics
STMicroelectronics 

Description
The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.


FEATUREs and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed currentoperation
■ High reverse voltage capability
■ High junction temperature
■ Insulated packages:
   – TO-220Ins
      Electrical insulation = 2500 VRMS
      Capacitance = 7 pF
   – TO-220FPAC
     Electrical insulation = 2500 VRMS
     Capacitance = 12 pF


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