STP7N65M2(2014) Hoja de datos - STMicroelectronics
Fabricante

STMicroelectronics
Description
These devices are N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Número de pieza
componentes Descripción
Ver
Fabricante
N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages
STMicroelectronics
N-channel 650 V, 0.37 Ω typ.,10 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages
STMicroelectronics
N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages ( Rev : 2019 )
STMicroelectronics
N-channel 900 V, 5 Ω typ., 2.1 A SuperMESH™ Power MOSFETs in IPAK, DPAK and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2 Power MOSFET in TO-220 and IPAK packages
STMicroelectronics
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics