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STP11NM60ND Hoja de datos - VBsemi Electronics Co.,Ltd

STP11NM60ND image

Número de pieza
STP11NM60ND

componentes Descripción

Other PDF
  no available.

PDF
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page
8 Pages

File Size
916.1 kB

Fabricante
VBSEMI
VBsemi Electronics Co.,Ltd 

FEATURES
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Low switching losses due to reduced Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)


Número de pieza
componentes Descripción
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Fabricante
N-Channel 650 V (D-S) MOSFET
PDF
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
PDF
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
PDF
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
PDF
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
PDF
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
PDF
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
PDF
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
PDF
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
PDF
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
PDF
VBsemi Electronics Co.,Ltd

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