DESCRIPTION
   STN7120DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FEATURE
● 60V/10A, RDS(ON) = 12mΩ
                      @VGS = 10V
   60V/8A, RDS(ON) = 15mΩ
                      @VGS = 4.5V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional on-resistance and
   maximum DC current capability
● PPAK5x6 package design