Description
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).

FEATUREs
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses

APPLICATION
■ Switching applications