Número de pieza
STL160N3LLH6
componentes Descripción
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Fabricante
STMicroelectronics
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STL160N3LLH6 Hoja de datos - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
FEATUREs
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
APPLICATIONs
■ Switching applications
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