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STK581U3C2D-E(2016) Hoja de datos - ON Semiconductor

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STK581U3C2D-E

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15 Pages

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432.2 kB

Fabricante
ON-Semiconductor
ON Semiconductor 

Overview
This “Inverter IPM” is highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP module (Single-In line Package). Output stage uses IGBT/FRD technology and implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag. Internal Boost diodes are provided for high side gate boost drive.

Function
• Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit
• All control input and status output are at low voltage levels directly compatible with microcontrollers
• Built-in cross conduction prevention
• Externally accessible embedded thermistor for substrate temperature measurement
• The level of the over-current protection current is adjustable with the external resistor, “RSD”

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