Número de pieza
STH110N7F6-2
componentes Descripción
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Fabricante
STMicroelectronics
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STH110N7F6-2 Hoja de datos - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
FEATUREs
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
APPLICATIONs
• Switching applications
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componentes Descripción
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