Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.

FEATUREs
■ High speed switching
■ Tight parameters distribution
■ Safe paralleling
■ Low thermal resistance
■ 6 µs short-circuit withstand time
■ Very fast soft recovery antiparallel diode
■ Lead free package

APPLICATIONs
■ Photovoltaic inverters
■ Uninterruptible power supply
■ Welding
■ Power factor correction
■ High switching frequency converters