Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

FEATUREs
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 25 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode

APPLICATIONs
• Industrial drives
• UPS
• Solar
• Welding