Número de pieza
STF6N60DM2
componentes Descripción
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STMicroelectronics
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STF6N60DM2 Hoja de datos - STMicroelectronics
STMicroelectronics
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
Número de pieza
componentes Descripción
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Fabricante
N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 550 mΩ typ., 8 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
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N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-220FP package
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N-channel 500 V, 0.299 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.065 Ω typ., 40 A MDmesh™ DM2 Power MOSFET in a TO-247 package
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N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
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N-channel 600 V, 0.26 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a TO-247 package
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