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STF28N60M2 Hoja de datos - STMicroelectronics

STF28N60M2 image

Número de pieza
STF28N60M2

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page
15 Pages

File Size
822.6 kB

Fabricante
ST-Microelectronics
STMicroelectronics 

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.


FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications
• LCC converters, resonant converters


Número de pieza
componentes Descripción
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Fabricante
N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages
PDF
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N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages
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N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP and I2PAKFP packages
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N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages
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N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-220FP package
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STMicroelectronics
N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages ( Rev : 2013 )
PDF
STMicroelectronics
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs in a TO-247 package
PDF
STMicroelectronics
N-channel 600 V, 0.135 Ω, 20 A MDmesh™ II Power MOSFET in TO-220FP
PDF
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N-channel 500 V, 0.45 Ω typ,8 A, MDmesh II Plus™ low Qg Power MOSFETs in DPAK and TO-220FP packages ( Rev : 2014 )
PDF
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N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
PDF
STMicroelectronics

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