Número de pieza
STF25NM60ND
componentes Descripción
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22 Pages
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632.3 kB
Fabricante
STMicroelectronics
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STF25NM60ND(2011) Hoja de datos - STMicroelectronics
STMicroelectronics
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
■ The worldwide best RDS(on)*area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
APPLICATION
■ Switching applications
Número de pieza
componentes Descripción
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Fabricante
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