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STE36N50

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ST-Microelectronics
STMicroelectronics 

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

■ HIGH CURRENT POWER MODULE
■ AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING)
■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY
■ EASY TO MOUNT
■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS
■ EXTREMELY LOW Rth JUNCTION TO CASE
■ VERY LOW DRAIN TO CASE CAPACITANCE
■ VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH)
■ ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743)

INDUSTRIAL APPLICATIONS:
■ SMPS & UPS
■ MOTOR CONTROL
■ WELDING EQUIPMENT
■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS


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Fabricante
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
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N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF
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