STD4N52K3(2018) Hoja de datos - STMicroelectronics
Fabricante

STMicroelectronics
Description
These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
FEATUREs
• 100% avalanche tested
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Improved diode reverse recovery characteristics
• Zener-protected
APPLICATIONs
• Switching applications
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Fabricante
N-channel 525 V, 0.72 Ω typ., 6 A, MDmesh™ K3 Power MOSFETs in DPAK and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 525 V, 1.2 Ω typ., 4.4 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages ( Rev : 2018 )
STMicroelectronics
N-channel 900 V, 5 Ω typ., 2.1 A SuperMESH™ Power MOSFETs in IPAK, DPAK and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 620 V, 1.28 Ω typ., 4.2 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2018 )
STMicroelectronics
N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages ( Rev : 2018 )
STMicroelectronics
N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages ( Rev : 2020 )
STMicroelectronics
N-channel 1000 V, 6.25 Ω typ., 1.85 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and IPAK packages
STMicroelectronics
N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2013 )
STMicroelectronics
N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220 and IPAK packages
STMicroelectronics