DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
■ TYPICAL RDS(on) = 0.030 Ω @ 4.5 V
■ TYPICAL RDS(on) = 0.037 Ω @ 2.7 V
■ ULTRA LOW THRESHOLD
    GATE DRIVE (2.7 V)
■ STANDARD OUTLINE FOR EASY
    AUTOMATED SURFACE MOUNT ASSEMBLY
   
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
    EQUIPMENT
■ POWER MANAGEMENT IN
    PORTABLE/DESKTOP PCs