Número de pieza
STC03DE170
componentes Descripción
Other PDF
no available.
PDF
page
9 Pages
File Size
311.8 kB
Fabricante
STMicroelectronics
HOME >>> STMicroelectronics >>> STC03DE170 PDF
STC03DE170 Hoja de datos - STMicroelectronics
STMicroelectronics
DESCRIPTION
The STC03DE170 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170 is designed for use in aux flyback smps for any three phase application.
General Features
● LOW EQUIVALENT ON RESISTANCE
● VERY FAST-SWITCH, UP TO 150 kHz
● SQUARED RBSOA, UP TO 1700 V
● VERY LOW CISS DRIVEN BY RG = 4.7 Ω
APPLICATION
● AUX SMPS FOR THREE PHASE MAINS
Número de pieza
componentes Descripción
Ver
Fabricante
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1700 V - 3 A - 0.55 Ω ( Rev : 2005 )
STMicroelectronics
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1500 V - 3 A - 0.55 Ω
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT® 1700V - 3A - 0.55 Ω ( Rev : 2006 )
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT® 1700V - 3A - 0.55 Ω ( Rev : 2006 )
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT® 2200 V - 3 A - 0.33 Ω
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT® 2200 V - 3 A - 0.33 Ω
STMicroelectronics
Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω ( Rev : 2009 )
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ω
STMicroelectronics
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ω
STMicroelectronics
Hybrid Emitter Switched Bipolar Transistor ESBT® 1000 V - 50 A - 0.026 Ω
STMicroelectronics
Share Link: 