Número de pieza
STB8NM60N
componentes Descripción
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page
19 Pages
File Size
667.8 kB
Fabricante
STMicroelectronics
STB8NM60N Hoja de datos - STMicroelectronics
STMicroelectronics
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Número de pieza
componentes Descripción
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Fabricante
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