Número de pieza
STB8NM60
componentes Descripción
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16 Pages
File Size
418.2 kB
Fabricante
STMicroelectronics
STB8NM60(2005) Hoja de datos - STMicroelectronics
STMicroelectronics
General Features
■ TYPICAL RDS(on) = 0.9Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allowing
system miniaturization and higher efficiencies.
Número de pieza
componentes Descripción
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Fabricante
N-CHANNEL 550V @ Tjmax-0.30Ω - 12A TO-220/FP/D²/I²PAK Zener-Protected SuperMESH™MOSFET ( Rev : 2005 )
STMicroelectronics
N-CHANNEL 650V@Tjmax - 0.25Ω - 20A I²PAK/TO-220/TO-220FP MDmesh™ MOSFET
STMicroelectronics
N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET
STMicroelectronics
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