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STB12NM50ND(2008) Hoja de datos - STMicroelectronics

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Número de pieza
STB12NM50ND

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13 Pages

File Size
578.1 kB

Fabricante
ST-Microelectronics
STMicroelectronics 

Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.


FEATUREs
■ The worldwide best RDS(on)* area amongst the
   fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
   capabilities


APPLICATION
■ Switching applications


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componentes Descripción
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