DESCRIPTION
This device is an electrically erasable programmable memory (EEPROM) fabricated with STMicroelectronics’s High Endurance, Advanced Polysilicon, CMOS technology. This guarantees an endurance typically well above one million Erase/Write cycles, with a data retention of 10 years. The memory operates with a power supply as low as 3 V.

■ Single Supply Voltage (3 V to 5.5 V)
■ Two Wire I2C Serial Interface
■ BYTE and MULTBYTE WRITE (up to 4 Bytes)
■ PAGE WRITE (up to 8 Bytes)
■ BYTE, RANDOM and SEQUENTIAL READ Modes
■ Self-Timed Programming Cycle
■ Automatic Address Incrementing
■ Enhanced ESD/Latch-Up Behavior
■ 1 Million Erase/Write Cycles (minimum)
■ 10 Year Data Retention (minimum)