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SST39LF100-70-4C-B3 Hoja de datos - Silicon Storage Technology

SST39LF100 image

Número de pieza
SST39LF100-70-4C-B3

componentes Descripción

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page
22 Pages

File Size
241.1 kB

Fabricante
SST
Silicon Storage Technology 

PRODUCT DESCRIPTION
The SST39LF/VF100 devices are 64K x16 CMOS Multi Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF100 and SST39VF100 write (Program or Erase) with a single voltage power supply of 3.0-3.6V and 2.7-3.6V, respectively.


FEATURES:
• Organized as 64K x16
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF100
– 2.7-3.6V for SST39VF100
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical)
– Standby Current: 3 µA (typical)
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Fast Read Access Time
– 45 ns for SST39LF100
– 70 ns for SST39VF100
• Latched Address and Data
• Fast Erase and Word-Program
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 µs (typical)
– Chip Rewrite Time: 1 second (typical)
• Automatic Write Timing
– Internal VPPGeneration
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Sets
• Packages Available
– 40-lead TSOP (10mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)

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