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SSP7N80A
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Fairchild Semiconductor
SSP7N80A Hoja de datos - Fairchild Semiconductor
Fairchild Semiconductor
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS= 800V
Low RDS(ON) : 1.472 W(Typ.)
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