Número de pieza
SSP7N60A
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Samsung
SSP7N60A Hoja de datos - Samsung
Samsung
FEATURES
■ Avalanche Rugged Technology
■ Rugged Gate Oxide Technology
■ Lower Input Capacitance
■ Improved Gate Charge
■ Extended Safe Operating Area
■ Lower Leakage Current : 25 μA (Max.) @ VDS = 600V
■ Lower RDS(ON) : 0.977 Ω (Typ.)
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