SSM6N7002CFU Hoja de datos - Toshiba
Número de pieza
SSM6N7002CFU
Fabricante

Toshiba
Features
(1) Gate-Source diode for protection
(2) Low drain-source on-resistance
: RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA)
RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA)
RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA)
APPLICATIONs
• High-Speed Switching
Número de pieza
componentes Descripción
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Fabricante
MOSFETs Silicon N-Channel MOS ( Rev : 2017 )
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2018 )
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba